| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Landesman, Jean-Pierre
University of Rennes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2023Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor depositioncitations
- 2022Low-temperature spatially-resolved luminescence spectroscopy of microstructures with strained III-V quantum wells
- 2022Strain engineering in III-V photonic components through structuration of SiN x filmscitations
- 2022Polarimetric photoluminescence microscope for strain imaging on semiconductor devicescitations
- 2021Stress Engineering of Dielectric Films on Semiconductor Substrates
- 2021Mechanical and Optical Properties of Amorphous SiN-Based Films Prepared By ECR-PECVD and CCP-PECVD
- 2021Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wellscitations
- 2021Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wellscitations
- 2021Mechanical strain mapping of GaAs based VCSELscitations
- 2020Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stresscitations
- 2016Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wellscitations
- 2015Microstructure based optical modeling of ZnO- porous silicon permeated nanocompositescitations
- 2006Photonics integrated circuits on plasma-polymer-HMDSO: Single-mode TE00-TM00 straight waveguides, S-Bends, Y-Junctions and Mach-Zehnder Interferometers
- 2006Photonics integrated circuits on plasma-polymer-HDMSO/Single-mode TEOO-TMOO straight waveguides, S-Bends, Y-Junctions and Mach-Zehnder Intererometers.
- 2006Conception of optical integrated circuits on polymerscitations
Places of action
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article
Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stress
Abstract
We measured details of the strain/stress fields produced in GaAs(100) and InP(100) substrates by the presence of narrow dielectric stripes processed from thin films obtained by plasma-enhanced chemical vapor deposition with a residual and controlled built-in compressive or tensile stress. Micro-photoluminescence techniques were used, measuring either the spectral shift of the luminescence peak or the degree of polarization (DOP) of the spectrally integrated signal. These techniques provide information on different parts of the strain tensor (isotropic and anisotropic). The anisotropic deformation was found to change with the magnitude and sign of the initial built-in stress, and also with the stripe width. Using an analytical model, we were able to determine accurately several physical parameters which describe the stress/strain situation. The localized stress at the edges, expressed within an edge force concept, is shown to follow the expected initial built-in stress and also a stress reduction when the stripe width is decreased. This is interpreted as an evidence of some strain relaxation occurring near the stripe edges. This relaxation also impacts the shape of the DOP curves near the edges. The other important conclusion is the observation that the strain does not return to an isotropic situation (as in the case of an infinite thin film) in the central part of the stripes, even if the widths of these stripes are large (100 μm). The analytical model is developed and explained step-by-step. This analytical model produces quantitative data that describe the different effects observed. These data can be very helpful in the design and optimization of photonic devices when the photo-elastic effect can be significant, such as waveguides. The μPL measurements coupled with the model can also provide feedback to allow better control of the processing of such thin film devices.