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Rodrigues, Alexandra
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article
Improved thermoelectric properties of nanocrystalline hydrogenated silicon thin films by post-deposition thermal annealing
Abstract
<p>The influence of post-deposition thermal annealing on the thermoelectric properties of n- and p-type nanocrystalline hydrogenated silicon thin films, deposited by plasma enhanced chemical vapour deposition, was studied in this work. The Power Factor of p-type films was improved from 7 × 10<sup>− 5</sup> to 4 × 10<sup>− 4</sup> W/(m.K<sup>2</sup>) as the annealing temperature, under vacuum, increased up to 400 °C while for n-type films it has a minor influence. Optimized Seebeck coefficient values of 460 μV/K and − 320 μV/K were achieved for p- and n-type films, respectively, with crystalline size in the range of 10 nm, leading to remarkable low thermal conductivity values (< 10 W.m<sup>− 1</sup>.K<sup>− 1</sup>) at room temperature.</p>