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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ranjbar, Samaneh
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Publications (3/3 displayed)
- 2018Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors
- 2017Effect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cellscitations
- 2016Progress in Cleaning and Wet Processing for Kesterite Thin Film Solar Cellscitations
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article
Effect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cells
Abstract
The influence of the duration of the KCN etching step on the efficiency of Cu2ZnSnSe4 (CZTSe) solar cells and Post deposition annealing (PDA) has been explored. CZTSe thin film absorbers prepared by selenization at 450 degrees C were etched by 5 wt% KCN/KOH from 30s up to 360 s before solar cell processing. KCN etching times above 120 s resulted in poor efficiencies. The fill factor (FF) and short circuit current density Jsc) of these devices were affected severely. After annealing the solar cells at 200 degrees C in N-2 atmosphere the best devices degraded and poor devices improved. Combined physical and optoelectronic characterization of the solar cells showed that PDA modifies the bulk defect density and also surface composition which reflects in the solar cell performance. (C) 2016 Elsevier B.V. All rights reserved. ; This research is partially funded by the Flemish government Department Economy, Science and innovation. This research has received funding from the European Union's Horizon 2020 - Research and Innovation Framework Programme under grant agreement No. 640868.