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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Raniero, Leandro
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2008Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputteringcitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
- 2007Amorphous/nanocrystalline silicon biosensor for the specific identification of unamplified nucleic acid sequences using gold nanoparticle probescitations
- 2006Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devicescitations
- 2006Characterization of nanocrystalline silicon carbide filmscitations
- 2006Electrical properties of amorphous and nanocrystalline hydrogenated silicon films obtained by impedance spectroscopycitations
- 2006Performances of an in-line PECVD system used to produce amorphous and nanocrystalline silicon solar cellscitations
- 2005Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHzcitations
- 2005Study of a-SiC : H buffer layer on nc-Si/a-Si : H solar cells deposited by PECVD technique.citations
- 2004Characterization of silicon carbide thin films prepared by VHF-PECVD technologycitations
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article
Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHz
Abstract
The aim of this paper is to present results concerning the role of the buffer layer on pin devices'. deposited in it single chamber for plasma enhanced chemical vapor deposition. using high hydrogen dilution and pressures at 27,12 MHz. By doing so, we allow the incorporation of nanoparticles into the i-layer, during plasma process. The results show solar cells with 8.8% efficiency with a collection efficiency of 95% in the blue region of the spectra. Apart from that, the results from impedance spectroscopy. imaginary impedance vs, real impedance. show difference of a semicircle radius as function of sample temperatures, which Could be explained by total device series resistance variation. (C) 2005 Elsevier B.V. All rights reserved.