| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Khan, Ramsha
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Laterally Bound Co Porphyrin on CdTe QD : A Long-Lived Charge-Separated Nanocompositecitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Transient Absorption Spectroscopy of Filmscitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO2-Si interfacecitations
- 2023Laterally Bound Co Porphyrin on CdTe QD : A Long-Lived Charge-Separated Nanocompositecitations
- 2023Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopycitations
- 2022Controlling the Wettability of ZnO Thin Films by Spray Pyrolysis for Photocatalytic Applicationscitations
- 2022Tunable Ti3+-Mediated Charge Carrier Dynamics of Atomic Layer Deposition-Grown Amorphous TiO2citations
- 2021Comparison of the heat-treatment effect on carrier dynamics in TiO2 thin films deposited by different methodscitations
- 2020Optimization of photogenerated charge carrier lifetimes in ald grown tio2 for photonic applicationscitations
- 2020Graphene-ferrites interaction for enhanced EMI shielding effectiveness of hybrid polymer compositescitations
- 2019EMI shielding properties of polymer blends with inclusion of graphene nano plateletscitations
Places of action
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article
Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopy
Abstract
<p>TiO<sub>2</sub> coatings are often deposited over silicon-based devices for surface passivation and corrosion protection. However, the charge transfer (CT) across the TiO<sub>2</sub>/Si interface is critical as it may instigate potential losses and recombination of charge carriers in optoelectronic devices. Therefore, to investigate the CT across the TiO<sub>2</sub>/Si interface, transient reflectance (TR) spectroscopy was employed as a contact-free method to evaluate the impact of interfacial SiO<sub>x</sub>, heat-treatments, and other phenomena on the CT. Thin-film interference model was adapted to separate signals for Si and TiO<sub>2</sub> and to estimate the number of transferred carriers. Charge transfer velocity was found to be 5.2 × 10<sup>4</sup> cm s<sup>−1</sup> for TiO<sub>2</sub> heat-treated at 300 °C, and even faster for amorphous TiO<sub>2</sub> if the interfacial SiO<sub>x</sub> layer was removed using HF before TiO<sub>2</sub> deposition. However, the interface is easily oversaturated because of slow carrier diffusion in TiO<sub>2</sub> away from the TiO<sub>2</sub>/Si interface. This inhibits CT, which could become an issue for heavily concentrated solar devices. Also, increasing the heat-treatment temperature from 300 °C to 550 °C has only little impact on the CT time but leads to reduced carrier lifetime of ¡3 ns in TiO<sub>2</sub> due to back recombination via the interfacial SiO<sub>x</sub>, which is detrimental to TiO<sub>2</sub>/Si device performance.</p>