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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Nandi, Sanjoy
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Topics
Publications (7/7 displayed)
- 2023Thermal transport in metal-NbOx-metal cross-point devices and its effect on threshold switching characteristicscitations
- 2023Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristorscitations
- 2020Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxidescitations
- 2020Electric Field- And Current-Induced Electroforming Modes in NbO x citations
- 2018Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantationcitations
- 2015Effect of electrode roughness on electroforming in HfO2 and defect-induced moderation of electric-field enhancementcitations
- 2014The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx filmscitations
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article
The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx films
Abstract
<p>Electrons scattered over large angles at relatively high energies (40 keV) are used to study NbO<sub>x</sub> films. These films were deposited by reactive sputter deposition on a Si substrate using a Nb target and an Ar/O<sub>2</sub> gas mixture. Energy spectra of electrons scattered from such samples exhibit elastic scattering peaks for each component due to the energy difference associated with scattering from different masses. The spectra provide in this way information about the film thickness as well as its stoichiometry. The stoichiometry and the deposition rate depends on the concentration of O<sub>2</sub> in the mixture. For Nb<sub>2</sub>O<sub>5</sub>-like films the energy loss measurements also give an estimate of the band gap, but for Nb films with lower O concentration the band gap is not resolved. This work illustrates the possibility of characterizing modern transition metal oxide films in a fairly simple electron scattering experiment.</p>