| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Zeman, Miro
Delft University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2023Stable passivation of cut edges in encapsulated n-type silicon solar cells using Nafion polymercitations
- 2022Introducing a comprehensive physics-based modelling framework for tandem and other PV systemscitations
- 2022Raman spectroscopy of silicon with nanostructured surfacecitations
- 2022Thermal Stable High-Efficiency Copper Screen Printed Back Contact Solar Cellscitations
- 2022Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interfacecitations
- 2021Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cellscitations
- 2021On current collection from supporting layers in perovskite/c-Si tandem solar cellscitations
- 2020Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contactscitations
- 2020Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO x/Poly-Si Passivating Contactscitations
- 2019High temperature oxidation pre-treatment of textured c-Si wafers passivated by a-Si:Hcitations
- 2019Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layercitations
- 2018Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cellscitations
- 2017Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cellscitations
- 2017Electron tomography analysis of 3D interfacial nanostructures appearing in annealed Si rich SiC filmscitations
- 2017New insights into the nanostructure of innovative thin film solar cells gained by positron annihilation spectroscopycitations
- 2017Design and comparison of a 10-kW interleaved boost converter for PV application using Si and SiC devicescitations
- 2016TEM analysis of multilayered nanostructures formed in the rapid thermal annealed silicon rich silicon oxide film
- 2014Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films
- 2014Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se-2 solar cellscitations
- 2009Structural properties of amorphous silicon prepared from hydrogen diluted silanecitations
- 2000Challenges in amorphous silicon solar cell technology
Places of action
| Organizations | Location | People |
|---|
article
High temperature oxidation pre-treatment of textured c-Si wafers passivated by a-Si:H
Abstract
<p>This work shows an alternative surface cleaning method for c-Si wafers to replace the standard chemical procedures as RCA or HNO<sub>3</sub>which involve hazardous chemicals or unstable processes. The method consists in a high-temperature oxidation treatment (HTO) performed in a classical tube furnace that incorporates organic and metal particles present on the c-Si surfaces in the growing SiO<sub>2</sub>layer. The result is as a reliable pre-treatment method for obtaining less defective c-Si surfaces ready for solar cell fabrication after SiO<sub>2</sub>removal. To test the surface passivation quality obtained with our alternative cleaning method, we grow amorphous silicon (a-Si:H) layers by plasma enhanced chemical vapor deposition on both sides of the c-Si wafer and systematically compare the effective carrier lifetime (τ<sub>eff</sub>) and implied V<sub>OC</sub>(iV<sub>oc</sub>) to the wafer treated with the standard cleaning in our laboratory. We optimize HTO treatment time reaching τ<sub>eff</sub>of ∼6 ms and iV<sub>oc</sub>of 721 mV for the best sample. We ascribe the improved passivation quality using HTO to two concurrent factors. Firstly, the encapsulation of defects into SiO<sub>2</sub>layer that is then etched prior a-Si:H deposition and secondly, to modification of the pyramids’ morphology that facilitates the surface passivation. SEM pictures and reflection measurements support the latter hypothesis.</p>