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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Iannuzzo, Francesco
Aalborg University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTscitations
- 2023Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductorscitations
- 2023Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductorscitations
- 2019Comparative study of wire bond degradation under power and mechanical accelerated testscitations
- 2019Highly Reliable Package using Cu Particles Sinter Paste for Next Generation Power Devices
- 2019Cost-Effective Prognostics of IGBT Bond Wires With Consideration of Temperature Swingcitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETscitations
- 2018Effect of short-circuit stress on the degradation of the SiO 2 dielectric in SiC power MOSFETscitations
- 2018Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperaturecitations
- 2017Impact of bending speed and setup on flex cracks in multilayer ceramic capacitorscitations
- 2016Short-Circuit Robustness Assessment in Power Electronic Modules for Megawatt Applicationscitations
- 2005FPGA implementation of the race-control algorithm for the full-bridge passive resonant commutated poles converter
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article
Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs
Abstract
This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.