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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Kočí, Jan | Prague |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Reissaus, S.
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article
XRD and ToF-SIMS study of intermetallic void formation in Cu-Sn micro-connects
Abstract
<p>An identified reliability challenge of significant importance to Cu-Sn bonding for 3D integration is Cu-Sn intermetallic void formation. Voids, often referred to as Kirkendall voids, form within the inter-diffusional zone between Cu and Sn, more specifically within the intermetallic compound Cu<sub>3</sub>Sn. The root-cause(s) of void formation is not well understood, therefore this study is designed to understand under what conditions voids form. The two main hypotheses for the root-causes of void formation are (i) the imbalance of diffusion rates between Cu and Sn during the formation of Cu-Sn intermetallic compounds and the resulting residual stresses and (ii) the co-deposition of impurities during Cu electroplating to void formation. Therefore, an ex- and in-situ x-ray diffraction (XRD) study is used to probe the material state as a function of thermal annealing, and a time-of-flight mass spectroscopy (ToF-SIMS) study is used to detect impurities co-deposited during Cu electroplating and to understand the effects of thermal annealing on the impurities' kinetic behaviour.</p>