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Mroczyński, Robert Paweł
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2020Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devicescitations
- 2017Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stackscitations
- 2014Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Filmscitations
- 2013Characterization of thin Gd2O3 magnetron sputtered layers citations
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article
Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacks
Abstract
This study presents the first results concerning technology and characterization of MIS structures with double-gate dielectric stacks fabricated on 4H-SiC substrates after ultra-shallow fluorine and nitrogen implantation from RF plasma. The gate stack was composed of ultra-thin (~ 5 nm) pedestal PECVD SiOx or SiOxNy, and top (~ 43 nm) HfOx fabricated by means of reactive magnetron sputtering process. The RF implantation procedure was optimized in order to obtain the maximum concentration of implanted ions very close to the SiC/dielectric interface. The electrical characterization of fabricated MIS structures have shown the improvement of electro-physical properties of MIS structures after the Post-Metallization Annealing, reduced Qeff/q and Dit values after RF ion implantation of MIS devices compared to corresponding reference structures, as well as the increase of effective permittivity for the double-gate dielectric stack with pedestal SiOxNy layer. Furthermore, all examined SiC-MIS test structures fabricated after plasma implantation processes are characterized by a reduction in a leakage current density, and very significant increase of the mean breakdown voltage value.