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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Procel, Paul
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Opto-electrical modelling and roadmap for 2T monolithic Perovskite/CIGS tandem solar cellscitations
- 2022The fundamental operation mechanisms of nc-SiOX≥0:H based tunnel recombination junctions revealedcitations
- 2022Slow Shallow Energy States as the Origin of Hysteresis in Perovskite Solar Cellscitations
- 2022Future of n-type PV
- 2022Introducing a comprehensive physics-based modelling framework for tandem and other PV systemscitations
- 2022Raman spectroscopy of silicon with nanostructured surfacecitations
- 2022Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interfacecitations
- 2021Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cellscitations
- 2021On current collection from supporting layers in perovskite/c-Si tandem solar cellscitations
- 2020Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contactscitations
- 2020Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO x/Poly-Si Passivating Contactscitations
- 2019Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layercitations
- 2018Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cellscitations
- 2017Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cellscitations
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article
Raman spectroscopy of silicon with nanostructured surface
Abstract
<p>We compared the morphology and Raman response of nanoscale shaped surfaces of Si substrates versus monocrystalline Si. Samples were structured by reactive ion etching, and four of them were covered by a RuO<sub>2</sub>-IrO<sub>2</sub> layer. Raman bands, centred at approx. 520 cm<sup>–1</sup>, belonging to samples processed by etching the Si surface have intensities higher by approximately one order of magnitude than those of reference non-etched samples. For nanostructured samples, the rise in the Raman signal was 12–14 ×, which is in agreement with the model of the electric field at the tips of Si due to their geometry. This phenomenon is related to the high absorption of excitation radiation. Nanostructured surfaces of samples containing a layer of RuO<sub>2</sub>-IrO<sub>2</sub> give rise to the phenomenon of surface enhancement of the Raman response most likely due to the charge transfer at the interface between silicon and conductive oxides. The nanostructured surface of Si without a metal layer behaves as a SERS substrate and detects the analytes at a low concentration.</p>