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| Naji, M. |
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| Azevedo, Nuno Monteiro |
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Lytvyn, Peter
V.E. Lashkaryov Institute of Semiconductor Physics
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2023Electron‐Assisted Deposition‐Polymerization in Vacuum of Polymethines with Terminal Allyl Groupcitations
- 2021Fluoropolymer Film Formation by Electron Activated Vacuum Depositioncitations
- 2021Impact of low energy ion beams on the properties of rr-P3HT films
- 2020Graphitic Nanoporous Carbon Thin Films: Fabrication Method, Structural, Electrical and Gas Sensor Propertiescitations
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article
Impact of low energy ion beams on the properties of rr-P3HT films
Abstract
wo types of ions (fluorine and titanium) are implanted into films of regio-regular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) spin-coated on glass substrates with subsequent annealing in argon atmosphere to modify their electrical properties and structure. The ion energy and fluence were within 0.2–40 keV and 1013–1015 cm−2 respectively. The dc resistance enhances after the intensive ion beam treatment while the ac impedance decreases. Ti ion implantation with 40 keV energy and 1014 cm−2 fluence induces decrease of the ac impedance by almost two orders of magnitude and appearance of the molecular hydrogen features in 1H NMR spectrum. The UV–VIS spectra of the films are blue shifted after their exposal to the ion beams, which correlates with the presence of oxygen. The ratio of the oxygen to carbon peak intensities (ξ=O1s/C1s) in the XPS spectra is proposed as a measure for the local partial disturbance of the film. EPR spectra demonstrate formation of the paramagnetic states with g factor <2, which is accompanied with the down-field shift of the NMR spectrum. The ion beams are found to have no significant etching effect as per results of the film thickness measurements and AFM images.