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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zeman, Miro
Delft University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2023Stable passivation of cut edges in encapsulated n-type silicon solar cells using Nafion polymercitations
- 2022Introducing a comprehensive physics-based modelling framework for tandem and other PV systemscitations
- 2022Raman spectroscopy of silicon with nanostructured surfacecitations
- 2022Thermal Stable High-Efficiency Copper Screen Printed Back Contact Solar Cellscitations
- 2022Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interfacecitations
- 2021Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cellscitations
- 2021On current collection from supporting layers in perovskite/c-Si tandem solar cellscitations
- 2020Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contactscitations
- 2020Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO x/Poly-Si Passivating Contactscitations
- 2019High temperature oxidation pre-treatment of textured c-Si wafers passivated by a-Si:Hcitations
- 2019Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layercitations
- 2018Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cellscitations
- 2017Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cellscitations
- 2017Electron tomography analysis of 3D interfacial nanostructures appearing in annealed Si rich SiC filmscitations
- 2017New insights into the nanostructure of innovative thin film solar cells gained by positron annihilation spectroscopycitations
- 2017Design and comparison of a 10-kW interleaved boost converter for PV application using Si and SiC devicescitations
- 2016TEM analysis of multilayered nanostructures formed in the rapid thermal annealed silicon rich silicon oxide film
- 2014Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films
- 2014Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se-2 solar cellscitations
- 2009Structural properties of amorphous silicon prepared from hydrogen diluted silanecitations
- 2000Challenges in amorphous silicon solar cell technology
Places of action
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article
Thermal Stable High-Efficiency Copper Screen Printed Back Contact Solar Cells
Abstract
<p>The high usage of silver in industrial solar cells may limit the growth of the solar industry. One solution is to replace Ag with copper. A screen printable Cu paste is used herein to metallize industrial interdigitated back contact (IBC) solar cells. A novel metallization structure is proposed for making solar cells. Cu paste is applied to replace the majority of the Ag used in IBC cells as busbars and fingers. Cu paste is evaluated for use as fingers, and solar cells are made to test conversion efficiency and reliability. The Cu paste achieves comparably low resistivity, and Cu paste printed cells demonstrate similar efficiency to Ag paste printed cells, with an average efficiency of 23%, and only 4.5 mg W<sup>−1</sup> of Ag usage. Also, the solar cells are stable and no Cu in-diffusion is observed under damp heat (85 °C, 85% relative humidity) and thermal stress (200 °C) for 1000 h, respectively. All processes used in this study can be carried out with industrial equipment. These findings reveal a new application for Cu pastes and point to a new direction for reducing Ag utilization and cost.</p>