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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Casati, R. |
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| Azam, Siraj |
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| Ali, M. A. |
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| Azevedo, Nuno Monteiro |
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Shehata, Mohamed M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2024Novel Interlayer Boosting the Performance of Evaporated Cu2O Hole-Selective Contacts in Si Solar Cellscitations
- 2022Outstanding Surface Passivation for Highly Efficient Silicon Solar Cells Enabled by Innovative AlyTiOx/TiOx Electron-Selective Contact Stackcitations
- 2021Passivation of InP solar cells using large area hexagonal-BN layerscitations
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article
Outstanding Surface Passivation for Highly Efficient Silicon Solar Cells Enabled by Innovative AlyTiOx/TiOx Electron-Selective Contact Stack
Abstract
<p>Passivating contacts based on transition metal oxides (TMOs) have the potential to overcome existing performance limitations in high-efficiency crystalline silicon (c-Si) solar cells, which is a significant driver for continuing cost/Watt reductions of photovoltaic electricity. Herein, innovative stacks of Al-alloyed TiO<sub>x</sub> (Al<sub>y</sub>TiO<sub>x</sub>) and pure TiO<sub>x</sub> as transparent electron-selective passivating contacts for n-type c-Si surfaces are explored. An optimized stack of 2 nm Al<sub>y</sub>TiO<sub>x</sub> and 2 nm TiO<sub>x</sub> is shown to provide both record-quality surface passivation and excellent electrical contact, with a surface recombination current density prefactor J <sub>0</sub> of 2.4 fA cm<sup>−2</sup> and a specific contact resistivity ρ <sub>c</sub> of 15.2 mΩ cm<sup>2</sup>. The performance of this innovative stack significantly exceeds previously reported values for pure or doped TiO<sub>x</sub> single layers, SiO<sub>x</sub>/TiO<sub>x</sub> stacks, a-Si:H/TiO<sub>x</sub> stacks, and other transparent contact technologies. Furthermore, an excellent efficiency of 21.9% is attained by incorporating the optimized stack as a full-area rear contact in an n-type c-Si solar cell. The findings set a new benchmark for the passivation performance of metal oxide-based passivating contacts, bringing it to a level on par with state-of-the-art SiO<sub>x</sub>/poly-Si contacts while greatly improving optical transparency.</p>