| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Flandre, Denis
Université Catholique de Louvain
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Liâ€Doping and Agâ€Alloying Interplay Shows the Pathway for Kesterite Solar Cells with Efficiency Over 14%citations
- 2024Li-doping and Ag-alloying interplay shows the pathway for kesterite solar cells with efficiency over 14%citations
- 2024Li-doping and Ag-alloying interplay shows the pathway for kesterite solar cells with efficiency over 14%citations
- 2023Ge-alloyed kesterite thin-film solar cells: previous investigations and current status – a comprehensive reviewcitations
- 2022Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistorscitations
- 2021Comparative study of Al2O3 and HfO2 for surface passivation of Cu(In,Ga)Se2 thin-films: An innovative Al2O3/HfO2 multi-stack designcitations
- 2021Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterizationcitations
- 2021Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterizationcitations
- 2021High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cellscitations
- 2020Performances Evaluation of On-chip Large-Size Tapped Transformer for MEMS applicationscitations
- 2020Anisotropic conductive film & flip-chip bonding for low-cost sensor prototyping on rigid & flex PCBcitations
- 2019Light management design in ultra-thin chalcopyrite photovoltaic devices by employing optical modellingcitations
- 2017Optimisation of rear reflectance in ultra-thin CIGS solar cells towards>20% efficiencycitations
- 2017The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devicescitations
- 2015Investigating the electronic properties of Al2O3/Cu(In, Ga)Se2 interfacecitations
- 2011Method for fabricating third generation photovoltaic cells based on Si quantum dots using ion implantation into SiO2citations
- 2011Neutron and gamma radiation effects on MEMS structures
- 2007Bulk and surface micromachined MEMS in thin film SOI technologycitations
Places of action
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article
High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells
Abstract
<p>Herein, it is demonstrated, by using industrial techniques, that a passivation layer with nanocontacts based on silicon oxide (SiO<sub>x</sub>) leads to significant improvements in the optoelectronical performance of ultrathin Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells. Two approaches are applied for contact patterning of the passivation layer: point contacts and line contacts. For two CIGS growth conditions, 550 and 500 °C, the SiO<sub>x</sub> passivation layer demonstrates positive passivation properties, which are supported by electrical simulations. Such positive effects lead to an increase in the light to power conversion efficiency value of 2.6% (absolute value) for passivated devices compared with a nonpassivated reference device. Strikingly, both passivation architectures present similar efficiency values. However, there is a trade-off between passivation effect and charge extraction, as demonstrated by the trade-off between open-circuit voltage (V<sub>oc</sub>) and short-circuit current density (J<sub>sc</sub>) compared with fill factor (FF). For the first time, a fully industrial upscalable process combining SiO<sub>x</sub> as rear passivation layer deposited by chemical vapor deposition, with photolithography for line contacts, yields promising results toward high-performance and low-cost ultrathin CIGS solar cells with champion devices reaching efficiency values of 12%, demonstrating the potential of SiO<sub>x</sub> as a passivation material for energy conversion devices.</p>