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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Dragoe, Nita
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Publications (6/6 displayed)
- 2023Thermoelectric Properties of High‐Entropy Wolframite Oxide: (CoCuNiFeZn)<sub>1−<i>x</i></sub>Ga<sub><i>x</i></sub>WO<sub>4</sub>citations
- 2021In- and out-plane transport properties of chemical vapor deposited TiO2 anatase filmscitations
- 2021Effect of water incorporation on the ionic conduction properties of the solid electrolyte material RbTiO.(HO)citations
- 2020Influence of hydration on the dielectric properties of the high permittivity material Rb 2 Ti 2 O 5
- 2020Influence of hydration on the dielectric properties of the high permittivity material Rb 2 Ti 2 O 5
- 2020Morphological, structural, optical, and electrical study of nanostructured thin films: Charge transport mechanism of p-type Co3O4citations
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article
Thermoelectric Properties of High‐Entropy Wolframite Oxide: (CoCuNiFeZn)<sub>1−<i>x</i></sub>Ga<sub><i>x</i></sub>WO<sub>4</sub>
Abstract
<jats:p>Herein, the synthesis of high‐entropy wolframite oxide (CoCuNiFeZn)<jats:sub>1‐<jats:italic>x</jats:italic></jats:sub>Ga<jats:italic>x</jats:italic>WO<jats:sub>4</jats:sub> through standard solid‐state route followed by spark plasma sintering and their structural, microstructural, and thermoelectric (TE) properties are investigated. X‐ray diffraction pattern followed by patterns matching refinement shows a monoclinic structure with the volume of the unit cell decreasing with increasing Ga content. The optical bandgap for these oxides shows a cocktail effect in high‐entropy configuration. The Seebeck coefficient indicates electrons as dominating charge carriers with a nondegenerate behavior. The electrical resistivity decreases with increasing temperature depicting a semiconducting nature. Thermal conductivity in high‐entropy samples (<jats:italic>κ</jats:italic> ≈ 2.1 W m<jats:sup>−1</jats:sup> K<jats:sup>−1</jats:sup> @ 300 K) is significantly lower as compared to MgWO<jats:sub>4</jats:sub> (<jats:italic>κ</jats:italic> ≈ 11.5 W m<jats:sup>−1</jats:sup> K<jats:sup>−1</jats:sup> @ 300 K), which can be explained by the strong phonon scattering due to large lattice disorder in high‐entropy configuration. The TE figure of merit <jats:italic>zT</jats:italic> increases with Ga doping via modifying all three TE parameters positively.</jats:p>