| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Spirito, Davide
Basque Center for Materials, Applications and Nanostructures
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxycitations
- 2024The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdiskscitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators
- 2023The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> Microdiskscitations
- 2023Lateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication
- 2022Terahertz subwavelength sensing with bio-functionalized germanium fano-resonatorscitations
- 2022Magnetic properties of layered hybrid organic-Inorganic metal-halide perovskites: Transition metal, organic cation and perovskite phase pffectscitations
- 2022Lateral Selective SiGe Growth for Dislocation-Free Virtual Substrate Fabricationcitations
- 2022Raman spectroscopy in layered hybrid organic-inorganic metal halide perovskites
- 2022Magnetic Properties of Layered Hybrid Organic‐Inorganic Metal‐Halide Perovskites: Transition Metal, Organic Cation and Perovskite Phase Effectscitations
- 2022Monolithic and catalyst-free selective epitaxy of InP nanowires on Silicon
- 2022Tailoring photoluminescence by strain-engineering in layered perovskite flakescitations
- 2020CsPbX3/SiOx (X = Cl, Br, I) monoliths prepared via a novel sol-gel route starting from Cs4PbX6 nanocrystalscitations
- 2020Nanocrystals of Lead Chalcohalides:A Series of Kinetically Trapped Metastable Nanostructurescitations
- 2020Nano- and microscale apertures in metal films fabricated by colloidal lithography with perovskite nanocrystalscitations
- 2020Nanocrystals of Lead Chalcohalidescitations
- 2019Extending the Colloidal Transition Metal Dichalcogenide Library to ReS2 Nanosheets for Application in Gas Sensing and Electrocatalysiscitations
- 2019Keratin-Graphene Nanocomposite: Transformation of Waste Wool in Electronic Devicescitations
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article
The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> Microdisks
Abstract
<jats:p>Germanium–tin (GeSn) microdisks are promising structures for complementary metal–oxide–semiconductor‐compatible lasing. Their emission properties depend on Sn concentration, strain, and operating temperature. Critically, the band structure of the alloy varies along the disk due to different lattice deformations associated with mechanical constraints. An experimental and numerical study of Ge<jats:sub>1−<jats:italic>x</jats:italic> </jats:sub>Sn<jats:sub> <jats:italic>x</jats:italic> </jats:sub> microdisk with Sn concentration between 8.5 and 14 at% is reported. Combining finite element method calculations, micro‐Raman and X‐ray diffraction spectroscopy enables a comprehensive understanding of mechanical deformation, where computational predictions are experimentally validated, leading to a robust model and insight into the strain landscape. Through micro‐photoluminescence experiments, the temperature dependence of the bandgap of Ge<jats:sub>1−<jats:italic>x</jats:italic> </jats:sub>Sn<jats:sub> <jats:italic>x</jats:italic> </jats:sub> is parametrized using the Varshni formula with respect to strain and Sn content. These results are the input for spatially dependent band structure calculations based on deformation potential theory. It is observed that Sn content and temperature have comparable effects on the bandgap, yielding a decrease of more than 20 meV for an increase of 1 at% or 100 K, respectively. The impact of the strain gradient is also analyzed. These findings correlate structural properties to emission wavelength and spectral width of microdisk lasers, thus demonstrating the importance of material‐related consideration on the design of optoelectronic microstructures.</jats:p>