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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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Li, Chao
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Publications (7/7 displayed)
- 2023Effect of surface modification technology on mechanical properties and dry fretting wear behavior of Inconel 718 alloy fabricated by laser powder-based direct energy depositioncitations
- 2023Strong signature of electron-vibration coupling in molecules on Ag(111) triggered by tip-gated dischargingcitations
- 2021A Segmented‐Target Sputtering Process for Growth of Sub‐50 nm Ferroelectric Scandium–Aluminum–Nitride Films with Composition and Stress Tuningcitations
- 2021A numerical study on fretting wear of inconel 718 alloy processed by ultrasonic nanocrystal surface modification
- 2021Time-resolved Raman spectroscopy of polaron formation in a polymer photocatalystcitations
- 2020Influence of ultra-low ethylene partial pressure on microstructural and compositional evolution of sputter-deposited Zr-C thin filmscitations
- 2018Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin filmscitations
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article
A Segmented‐Target Sputtering Process for Growth of Sub‐50 nm Ferroelectric Scandium–Aluminum–Nitride Films with Composition and Stress Tuning
Abstract
<jats:sec><jats:label /><jats:p>Harnessing the recently discovered ferroelectricity in scandium aluminum nitride (Sc<jats:sub><jats:italic>x</jats:italic></jats:sub>Al<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>N) for the realization of integrated electronic and electromechanical devices requires a low‐temperature growth process that enables versatile control over film thickness, stoichiometric composition, and stress. Herein, a reactive magnetron sputtering process that enables extreme scaling of film thickness and tuning of composition and residual stress is reported on. Highly crystalline Sc<jats:sub><jats:italic>x</jats:italic></jats:sub>Al<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>N films with thicknesses of over 25–250 nm with scandium concentrations of over 22–30 at% are sputtered using a segmented target created from scandium and aluminum tiles. The residual stress in the films is widely tuned from highly compressive to tensile using a pressure‐ and gas‐flow‐independent approach based on adjusting the electrical termination of the targets. The crystallinity, texture, and ferroelectric characteristics are measured for Sc<jats:sub><jats:italic>x</jats:italic></jats:sub>Al<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>N films with different thicknesses, compositions, and residual stresses. The results highlight the consistent crystallinity and ferroelectric properties despite extreme thickness miniaturization to sub‐50 nm, and the large dependence of the coercive field on the residual stress and Sc concentration.</jats:p></jats:sec>