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Dadgar, A.
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article
Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers
Abstract
In this paper we report preliminary results on the vacancy type defects in thin film aluminum nitride (AlN). We have performed positron beam measurements in 7 thin film AlN layers on silicon grown-by metal-organic vapour phase epitaxy (MOVPE) in varying conditions. The growth temperature, V/III supply ratio of the precursor molecules and the layer thicknesses have been varied. All the samples grown had a high concentration of vacancy type defects, hence it seems that the structural defects and possible strain due to lattice mismatch between materials has a major role in the vacancy formation. Additionally, the growth conditions were found to have an effect on the vacancy content of the samples. Increasing growth temperatures and decreasing layer thickness seemed to increase the vacancy concentration whereas Will ratio of the growth gases did not seem to have an effect.