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Ager, J. W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2013P-type and undoped InGaN across the entire alloy composition range
- 2013P-type InGaN across the entire alloy composition rangecitations
- 2012Embedded binary eutectic alloy nanostructurescitations
- 2009Properties of native point defects in In1-xAlxN alloyscitations
- 2008Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applicationscitations
- 2008Band gap bowing parameter of In1-x Alx Ncitations
- 2008High efficiency InAlN-based solar cellscitations
- 2008Low-temperature grown compositionally graded InGaN filmscitations
- 2002Band anticrossing in highly mismatched group II-VI semiconductor alloys
- 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloyscitations
- 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantationcitations
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article
Low-temperature grown compositionally graded InGaN films
Abstract
A new thin film growth technique known as energetic neutral atomic-beam lithography/epitaxy (ENABLE) provides a large energetic N atom flux and eliminates the need for high substrate temperatures as compared to molecular beam epitaxy, making isothermal growth over the entire InGaN alloy composition range possible without phase separation. 500-800 nm thick compositionally graded InGaN films were grown by ENABLE at ∼450°C with the following structure types: (1) with the Ga-rich material on the surface and (2) with the Inrich material on the surface. Rutherford backscattering spectrometry, transmission electron microscopy, X-ray diffraction, absorption spectroscopy, photoluminescence, and Hall effect measurements were used to assess the thickness, composition, crystalline quality, and optical and electrical properties of the films. The results establish the new ENABLE method as uniquely capable of growing compositionally graded InGaN films and, in the future, InN/GaN heterostructures. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.