| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cimalla, Volker
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Absorption and birefringence study for reduced optical losses in diamond with high nitrogen-vacancy concentrationcitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Epitaxial Lateral Overgrowth of Wafer‐Scale Heteroepitaxial Diamond for Quantum Applicationscitations
- 2022Direct low-temperature bonding of AlGaN/GaN thin film devices onto diamond substrates
- 2021Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carrierscitations
- 2021Coalescence aspects of III-nitride epitaxycitations
- 2021Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation networkcitations
- 2018Metallization design investigations for graphene as a virtually massless electrode material for 2.1 GHz solidly mounted (BAW-SMR) resonatorscitations
- 2017Wettability investigations and wet transfer enhancement of large-area CVD-Graphene on aluminum nitridecitations
- 2016Electrostatic self-assembly of diamond nanoparticles onto Al- and N-polar sputtered aluminum nitride surfacescitations
- 2016Interaction of indium oxide nanoparticle film surfaces with ozone, oxygen and watercitations
- 2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTscitations
- 2010Elastic properties of nanowirescitations
- 2010Investigation of stress in AIN thin films for piezoelectric MEMS
- 2009Determination of the composition of In(x)Ga(1-x)N from strain measurementscitations
- 2009Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3 ; Bandabstand, elektronische Struktur und Elektronenakkumulation an der Oberfläche von kubischem und rhomoedrischem In2O3citations
- 2005New route of nanowire integration in microfabrication processes for sensor applications
Places of action
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article
Epitaxial Lateral Overgrowth of Wafer‐Scale Heteroepitaxial Diamond for Quantum Applications
Abstract
Wafer‐scale heteroepitaxial diamond thin films demonstrate multiple advantages for a further development of integrated optical and quantum devices based on impurity-vacancy color centers. The main obstacle here is a high structural defect density characteristic for heteroepitaxial epilayers. In this work, technological methods of stress control, NV formation, and defect density reduction in diamond epilayers, which are based on principles of epitaxial lateral overgrowth (ELO) are reported on. Herein, material and quantum properties of NV‐doped diamond thin films obtained by patterned nucleation growth and by ELO of microstructured epilayers, are compared. It is demonstrated that a combination of both methods might have a significant potential for the wafer‐scale production of heteroepitaxial diamond for quantum devices. ; 221 ; 8