| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Flandre, Denis
Université Catholique de Louvain
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Liâ€Doping and Agâ€Alloying Interplay Shows the Pathway for Kesterite Solar Cells with Efficiency Over 14%citations
- 2024Li-doping and Ag-alloying interplay shows the pathway for kesterite solar cells with efficiency over 14%citations
- 2024Li-doping and Ag-alloying interplay shows the pathway for kesterite solar cells with efficiency over 14%citations
- 2023Ge-alloyed kesterite thin-film solar cells: previous investigations and current status – a comprehensive reviewcitations
- 2022Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistorscitations
- 2021Comparative study of Al2O3 and HfO2 for surface passivation of Cu(In,Ga)Se2 thin-films: An innovative Al2O3/HfO2 multi-stack designcitations
- 2021Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterizationcitations
- 2021Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterizationcitations
- 2021High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cellscitations
- 2020Performances Evaluation of On-chip Large-Size Tapped Transformer for MEMS applicationscitations
- 2020Anisotropic conductive film & flip-chip bonding for low-cost sensor prototyping on rigid & flex PCBcitations
- 2019Light management design in ultra-thin chalcopyrite photovoltaic devices by employing optical modellingcitations
- 2017Optimisation of rear reflectance in ultra-thin CIGS solar cells towards>20% efficiencycitations
- 2017The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devicescitations
- 2015Investigating the electronic properties of Al2O3/Cu(In, Ga)Se2 interfacecitations
- 2011Method for fabricating third generation photovoltaic cells based on Si quantum dots using ion implantation into SiO2citations
- 2011Neutron and gamma radiation effects on MEMS structures
- 2007Bulk and surface micromachined MEMS in thin film SOI technologycitations
Places of action
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article
Comparative study of Al2O3 and HfO2 for surface passivation of Cu(In,Ga)Se2 thin-films: An innovative Al2O3/HfO2 multi-stack design
Abstract
In Cu(In,Ga)Se2 (CIGS) thin-film solar cells, interface recombination is one of the most important limiting factors with respect to device performance. Therefore, in this study, Metal-Insulator- Semiconductor samples are used to investigate and compare the passivation effects of Al2O3 and HfO2 at the interface with CIGS. Capacitance-Voltage-Frequency measurements allow to qualitatively and quantitatively assess the existence of high negative charge density (Qf ~ -1012 cm- 2) and low interface-trap density (Dit ~1011 cm-2 eV-1). At the rear interface of CIGS solar cells, these respectively induce field-effect and chemical passivation. A trade-off is highlighted between stronger field-effect for HfO2 and lower interface-trap density for Al2O3. This motivates the usage of Al2O3 to induce chemical passivation at the front interface of CIGS solar cells but raises the issue of its processing compatibility with the buffer layer. Therefore, an innovative Al2O3/HfO2 multistack design is proposed and investigated for the first time. Effective chemical passivation is similarly demonstrated for this novel design, suggesting potential decrease in recombination rate at the front interface in CIGS solar cells and increased efficiency. 300°C annealing in N2 environment enable to enhance passivation effectiveness by reducing Dit while surface cleaning may reveal useful for alternative CIGS processing methods.