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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Li, Xu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Temperature evolution of the magnetic properties of Ag/Fe nanodot arrayscitations
- 2020Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlNcitations
- 2020Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity siliconcitations
- 2020Polarity dependence in Cl 2 -based plasma etching of GaN, AlGaN and AlNcitations
- 2020Optimization of ohmic contact for AlGaN/GaN HEMT on low-resistivity siliconcitations
- 2017Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing
- 2012Direct Nano-Patterning of Commercially Pure Titanium with Ultra-Nanocrystalline Diamond Stamps
- 2012Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stampscitations
- 2009III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate)
- 2008Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics
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article
Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stamps
Abstract
In order to directly imprint features into a hard metal such as titanium, an imprinting stamp composed of material of greater hardness is required. Diamond is the hardest known material, so is an obvious choice for the production of direct-imprint stamps. Diamond also benefits from a low surface energy, chemical inertness, high resistance to wear and is easily cleaned of contaminants, further favouring it as a stamp material of choice. Chemical vapour deposited ultra-nanocrystalline diamond (UNCD) provides similar mechanical properties to bulk single crystal diamond and can be deposited across large surface areas. This work examines the use of UNCD as a stamp medium for the transfer of nanoscale features into commercially pure titanium (cpTi) substrates. Development of an efficient and viable method for nanopatterning large, non-planar cpTi surfaces is highly desirable to control cell adhesion on the surface of bio-implants. The fabrication of UNCD nanoimprint stamps is detailed and the ability of UNCD to imprint cpTi is illustrated. A square-ordered matrix of 200 nm diameter pillars over a quarter mm square area are shown to be imprinted with the depth quantified against load (kg). The limitations of the technology are also discussed.