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Falmbigl, Matthias
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article
The Synthesis, Structure, and Electrical Characterization of (SnSe)<sub>1.2</sub>TiSe<sub>2</sub>
Abstract
<jats:title>Abstract</jats:title><jats:p>(SnSe)<jats:sub>1.2</jats:sub>TiSe<jats:sub>2</jats:sub> was found to self‐assemble from a precursor containing modulated layers of Sn–Se and Ti–Se over a surprisingly large range of layer thicknesses and compositions. The constituent lattices form an alternating layer superstructure with rotational disorder present between the layers. This compound was found to have the highest Seebeck coefficient measured for analogous TiX<jats:sub>2</jats:sub> containing misfit layered compounds to date, suggesting potential for low‐temperature thermoelectric applications. Electrical characterization suggests that electrons transferred from SnSe to TiSe<jats:sub>2</jats:sub> are responsible for the higher carrier concentration observed relative to bulk TiSe<jats:sub>2</jats:sub>. The transfer of charge from one constituent to the other may provide a mechanism for doping layered dichalcogenides for various applications without negatively affecting carrier mobility.</jats:p>