| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Johrendt, Dirk
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2022The kagomé metals RbTi3Bi5 and CsTi3Bi5citations
- 2019Solid Solutions of Grimm–Sommerfeld Analogous Nitride Semiconductors II‐IV‐N2 (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculationscitations
- 2019Solid Solutions of Grimm–Sommerfeld Analogous Nitride Semiconductors II‐IV‐N<sub>2</sub> (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculationscitations
- 2015[(Li0.8Fe0.2)OH]FeS and the ferromagnetic superconductors [(Li0.8Fe0.2)OH]Fe(S1−xSex) (0 < x ≤ 1)citations
- 2013Ce4Ag3Ge4O0.5 - chains of oxygen-centered OCe2Ce2/2] tetrahedra embedded in a CeAg3Ge4] intermetallic matrixcitations
- 2009The layered iron arsenide oxides Sr2CrO3FeAs and Ba2ScO3FeAscitations
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article
Solid Solutions of Grimm–Sommerfeld Analogous Nitride Semiconductors II‐IV‐N<sub>2</sub> (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculations
Abstract
<jats:title>Abstract</jats:title><jats:p>Grimm–Sommerfeld analogous II‐IV‐N<jats:sub>2</jats:sub> nitrides such as ZnSiN<jats:sub>2</jats:sub>, ZnGeN<jats:sub>2</jats:sub>, and MgGeN<jats:sub>2</jats:sub> are promising semiconductor materials for substitution of commonly used (Al,Ga,In)N. Herein, the ammonothermal synthesis of solid solutions of II‐IV‐N<jats:sub>2</jats:sub> compounds (II=Mg, Mn, Zn; IV=Si, Ge) having the general formula (II<jats:sup>a</jats:sup><jats:sub>1−<jats:italic>x</jats:italic></jats:sub>II<jats:sup>b</jats:sup><jats:sub><jats:italic>x</jats:italic></jats:sub>)‐IV‐N<jats:sub>2</jats:sub> with <jats:italic>x</jats:italic>≈0.5 and ab initio DFT calculations of their electronic and optical properties are presented. The ammonothermal reactions were conducted in custom‐built, high‐temperature, high‐pressure autoclaves by using the corresponding elements as starting materials. NaNH<jats:sub>2</jats:sub> and KNH<jats:sub>2</jats:sub> act as ammonobasic mineralizers that increase the solubility of the reactants in supercritical ammonia. Temperatures between 870 and 1070 K and pressures up to 200 MPa were chosen as reaction conditions. All solid solutions crystallize in wurtzite‐type superstructures with space group <jats:italic>Pna</jats:italic>2<jats:sub>1</jats:sub> (no. 33), confirmed by powder XRD. The chemical compositions were analyzed by energy‐dispersive X‐ray spectroscopy. Diffuse reflectance spectroscopy was used for estimation of optical bandgaps of all compounds, which ranged from 2.6 to 3.5 eV (Ge compounds) and from 3.6 to 4.4 eV (Si compounds), and thus demonstrated bandgap tunability between the respective boundary phases. Experimental findings were corroborated by DFT calculations of the electronic structure of pseudorelaxed mixed‐occupancy structures by using the KKR+CPA approach.</jats:p>