• Machida, Tomoki
• Serles, Peter
• Shahsa, Haleh
• Singh, C. V.
• Nicholson, Eric
• Cui, Teng
• Wang, Guorui
• Starkov, Danny
• Zavabeti, Ali
• He, Shuo
• Kumral, Boran
• Onodera, Momoko
• Barri, Nima

Abstract

<jats:title>Abstract</jats:title><jats:p>Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n‐type 2D materials like MoS<jats:sub>2</jats:sub> and WS<jats:sub>2</jats:sub>, while p‐type 2D materials such as WSe<jats:sub>2</jats:sub> remain relatively unexplored. Here, the impact of controlled mechanical strain on the electron transport characteristics of both mono and bi‐layer WSe<jats:sub>2</jats:sub> is studied. Through coupling atomic force microscopy (AFM) nanoindentation techniques and conductive AFM, the ability to finely tune the electronic band structure of WSe<jats:sub>2</jats:sub> is demonstrated. The research offers valuable mechanistic insights into understanding how WSe<jats:sub>2</jats:sub>'s electronic properties respond to mechanical strain, a critical prerequisite for the development of flexible photoelectronic devices. It is also observed that under high pressure, the AFM tip/monolayer WSe<jats:sub>2</jats:sub>/metal substrate junction transitions from Schottky to Ohmic contact, attributed to significant charge injection from the substrate to the WSe<jats:sub>2</jats:sub>. These findings are significant for designing efficient metal/semiconductor contact in thin and flexible PMOS (p‐type Metal–Oxide–Semiconductor) devices.</jats:p>

Topics

• impedance spectroscopy
• atomic force microscopy
• semiconductor
• nanoindentation
• band structure