| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Rieger, Bernhard
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024A Fluorescent Polymer for Facile One-Step Writing of Polychromic Hidden Information in Flexible Films
- 2024Ambient catalytic spinning of polyethylene nanofiberscitations
- 2023Controlling polyethylene branching via surface confinement of Ni complexescitations
- 2023Evaluating the molecular weight distribution of ultrahigh molecular weight polypropylene through rheologycitations
- 2023Annealing‐Free Ohmic Contacts to <i>n</i>‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlO<i><sub>x</sub></i>
- 2023Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Aluminacitations
- 2023Fiber Spinning of Ultrahigh Molecular Weight Isotactic Polypropylene: Melt Spinning and Melt Drawingcitations
- 2023Recent advances on α-diimine Ni and Pd complexes for catalyzed ethylene (Co)polymerization: A comprehensive review
- 2023Thermally Latent Bases in Dynamic Covalent Polymer Networks and their Emerging Applicationscitations
- 2023Recent advances on α -diimine Ni and Pd complexes for catalyzed ethylene (co)polymerization: a comprehensive reviewcitations
- 2021Introduction of Photolatent Bases for Locally Controlling Dynamic Exchange Reactions in Thermo-Activated Vitrimerscitations
- 2015Concerning the eeactivation of cobalt(III)-based porphyrin and salen catalysts in epoxide/CO 2 copolymerizationcitations
Places of action
| Organizations | Location | People |
|---|
article
Annealing‐Free Ohmic Contacts to <i>n</i>‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlO<i><sub>x</sub></i>
Abstract
<jats:title>Abstract</jats:title><jats:p>A plasma‐assisted atomic layer deposition (PE‐ALD) process is reported for creating ohmic contacts to n‐type GaN that combines native oxide reduction, near‐surface doping, and encapsulation of GaN in a single processing step, thereby eliminating the need for both wet chemical etching of the native oxide before metallization and thermal annealing after contact formation. Repeated ALD cycling of trimethyl aluminum (TMA) and high‐intensity hydrogen (H<jats:sub>2</jats:sub>) plasma results in the deposition of a sub‐nanometer‐thin (≈8 Å) AlO<jats:sub>x</jats:sub> layer via the partial transformation of the GaN surface oxide into AlO<jats:sub>x</jats:sub>. Hydrogen plasma‐induced nitrogen vacancies in the near‐surface region of GaN serve as shallow donors, promoting efficient out‐of‐plane electrical transport. Subsequent metallization with a Ti/Al/Ti/Au stack results in low contact resistance, ohmic behavior, and smooth morphology without requiring annealing. This electrical contracting approach thus meets the thermal budget requirements for Si‐based complementary metal–oxide–semiconductor structures and can facilitate the design and fabrication of advanced GaN‐on‐Si heterodevices.</jats:p>