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Rojas, Geoffrey A.
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article
Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics
Abstract
<p>As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L1<sub>0</sub>-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L1<sub>0</sub>-FePd thin films on Si/SiO<sub>2</sub> wafers is still unmet. In this paper, high-quality L1<sub>0</sub>-FePd and its SAF on Si/SiO<sub>2</sub> wafers are prepared by coating the amorphous SiO<sub>2</sub> surface with an MgO(001) seed layer. The prepared L1<sub>0</sub>-FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L1<sub>0</sub>-FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L1<sub>0</sub>-FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.</p>