| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Krishnan, Gopi
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 20232D Oxides Realized via Confinement Heteroepitaxycitations
- 2023In-situ S/TEM Visualization of Metal-to-Metal Hydride Phase Transformation of Magnesium Thin Films
- 2022Large-Area Intercalated 2D-Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torquecitations
- 2018Shape and structural motifs control of MgTi bimetallic nanoparticles using hydrogen and methane as trace impuritiescitations
- 2018Elastic versus Alloying Effects in Mg-Based Hydride Filmscitations
- 2014Synthesis and exceptional thermal stability of Mg-based bimetallic nanoparticles during hydrogenationcitations
- 2014Determination of the Electronic Energy Levels of Colloidal Nanocrystals using Field-Effect Transistors and Ab-Initio Calculationscitations
- 2013Tuning structural motifs and alloying of bulk immiscible Mo-Cu bimetallic nanoparticles by gas-phase synthesiscitations
- 2010Improved thermal stability of gas-phase Mg nanoparticles for hydrogen storagecitations
Places of action
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article
2D Oxides Realized via Confinement Heteroepitaxy
Abstract
<jats:title>Abstract</jats:title><jats:p>Novel confinement techniques facilitate the formation of non‐layered 2D materials. Here it is demonstrated that the formation and properties of 2D oxides (GaO<jats:sub>x</jats:sub>, InO<jats:sub>x</jats:sub>, SnO<jats:sub>x</jats:sub>) at the epitaxial graphene (EG)/silicon carbide (SiC) interface is dependent on the EG buffer layer properties prior to element intercalation. Using 2D Ga, it is demonstrated that defects in the EG buffer layer lead to Ga transforming to GaO<jats:sub>x</jats:sub> with non‐periodic oxygen in a crystalline Ga matrix via air oxidation at room temperature. However, crystalline monolayer GaO<jats:sub>2</jats:sub> and bilayer Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> with ferroelectric wurtzite structure(FE‐WZ') can then be formed via subsequent high‐temperature O<jats:sub>2</jats:sub> annealing. Furthermore, the graphene/X/SiC (X = 2D Ga or Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) junction is tunable from Ohmic to a Schottky or tunnel barrier depending on the interface species. Finally, using vertical transport measurements and electron energy loss spectroscopy analysis, the bandgap of 2D gallium oxide is identified as 6.6 ± 0.6 eV, significantly larger than that of bulk β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> (≈4.8 eV), suggesting strong quantum confinement effects at the 2D limit. The study presented here is foundational for development of atomic‐scale, vertical 2D/3D heterostructure for applications requiring short transit times, such as GHz and THz devices.</jats:p>